Single-mask Thermal Displacement Sensor in Mems
نویسندگان
چکیده
In this work we describe a one degree-of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a measurement range of 50 μm and using a measurement bandwidth of 30 Hz, the 1-sigma noise corresponds to 3.47 nm. The power consumption of the sensor is 209 mW, almost completely independent of stage position. The drift of the sensor over a measurement period of 32 hours was 32 nm.
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